Investigation of the characteristics of GIDL current in 90nm CMOS technology

• 来源期刊: 中国物理（英文版）
• 关键词: GIDL 90nm CMOS technology band-to-band tunnelling
• 年，卷（期）: 2006,（3）
• 页码范围: 645-648
• 页数: 4页
• 语种: 英文

摘要

A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias VD has a strong effect on GIDL current as compared with the gate bias VG at the same drain-gate voltage VDG-It is found that the difference between ID in the off-state ID-VG characteristics and the corresponding one in the off-state ID-VD characteristics, which is defined as /DIFF, versus VDG shows a peak. The difference between the influences of VD and VG on GIDL current is shown quantitatively by /DIFF, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum /DIFF(IDIFF.MAX) varies linearly with VDG in logarithmic coordinates and also VDG at IDIFF.MAX with VF which is the characteristic voltage of /DIFF- The relations are studied and some related expressions are given.