Microstructure Study on Heterostructures of AlInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Channelling and XRD

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2006,（9）
• 页码范围: 2510-2512
• 页数: 3页
• 语种: 英文

摘要

A quaternary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with a thick (＞ 1 μm) GaN intermediate layer.