Preparation of Cu(In,Ga)Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2006,（8）
• 页码范围: 2259-2261
• 页数: 3页
• 语种: 英文

摘要

Cu(In, Ga)Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃,due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu(In,Ga)Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560 ℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu(In, Ga)Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.