Study on the delamination of tungsten thin films on Sb2Te3

• 来源期刊: 中国物理（英文版）
• 关键词: C-RAM delamination adhesion
• 年，卷（期）: 2006,（8）
• 页码范围: 1849-1854
• 页数: 6页
• 语种: 英文

摘要

To investigate the reliability of electrode materials for chalcogenide random access memory (C-RAM) applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb2 Te3 bilayer system surface are observed by field emission scanning electronic microscope (FESEM) and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.