Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer

• 来源期刊: 中国物理（英文版）
• 关键词: metal-oxide-semiconductor capacitors HfTiON capacitance-voltage characteristics leakage current interlayer
• 年，卷（期）: 2006,（8）
• 页码范围: 1879-1882
• 页数: 4页
• 语种: 英文

摘要

The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O2 ambience, followed by an annealing in different gas ambiences of N2, NO and NHa at 600°C for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si≡N bonds to passivate dangling Si bonds and replace strained Si- O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability.