Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2006,（8）
• 页码范围: 2095-2097
• 页数: 3页
• 语种: 英文

摘要

A compact low-threshold Raman laser at 1178nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd3+ : YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of 5 kHz. The maximum Raman laser output is 182mW with the pulse duration smaller than 20ns at a pulse repetition frequency of 30 kHz with 1.8W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.