Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses

• 来源期刊: 中国物理B（英文版）
• 关键词: interface states substrate current ultra-thin oxide constant voltage stress
• 年，卷（期）: 2007,（11）
• 页码范围: 3502-3506
• 页数: 5页
• 语种: 英文

摘要

The low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib(△Ib) are proportional to variations of Nit (△Nit). The Nit energy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.