Determination of conduction band edge characteristics of strained Si/Si1-xGex

• 来源期刊: 中国物理B（英文版）
• 关键词: strained Si/Si1-xGex conduction-band K.P method
• 年，卷（期）: 2007,（12）
• 页码范围: 3827-3831
• 页数: 5页
• 语种: 英文

摘要

The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si1-xGex substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent near minima of CB bottom energy, derived from the liner deformation potential theory, is determine, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses (ml* and mt*) are obtained.