Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

• 来源期刊: 中国物理（英文版）
• 关键词: RF-PECVD TMDSO SiOx films barrier property
• 年，卷（期）: 2007,（4）
• 页码范围: 1101-1104
• 页数: 4页
• 语种: 英文

摘要

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared,water wpour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.