Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

• 来源期刊: 中国物理（英文版）
• 关键词: ZnO thin films thermal annealing ion implantation photoluminescence
• 年，卷（期）: 2007,（4）
• 页码范围: 1119-1124
• 页数: 6页
• 语种: 英文

摘要

This paper reports that ion implantation to a dose of 1 × 1017 ions/cm2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE)exitonic ultraviolet emission increased with increasing annealing temperature from 600-900 ℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600-750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ～ 850 ℃ and ～ 750 ℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600-900 ℃.