Si1Sb2Te3 phase change material for chalcogenide random access memory

• 来源期刊: 中国物理（英文版）
• 关键词: phase change chalcogenide random access memory Si-Sb-Te
• 年，卷（期）: 2007,（8）
• 页码范围: 2475-2478
• 页数: 4页
• 语种: 英文

摘要

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory.Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase.The film holds a threshold current about 0.155 mA,which is smaller than the value 0.31 mA of Ge2Sb2Te5 film.Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at～180°C and changes to hexagonal structure at～270°C.Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method.Data retention of the films was characterized as well.