Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

• 来源期刊: 中国物理（英文版）
• 关键词: InGaAlAs/AlGaAs distributed feedback laser diode numerical simulation
• 年，卷（期）: 2007,（3）
• 页码范围: 817-820
• 页数: 4页
• 语种: 英文

摘要

Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800-850 nm.In this work,in addition to a traditional unstrained GaAs/AlGaAs distributed feedback(DFB) laser diode,a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic.The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density,higher gain,lower Auger recombination rate.and higher stimulated recombination rate.which lead to better a device performance.than the traditional unstrained GaAs/AlGaAs DFB laser diode.