The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

• 来源期刊: 中国物理（英文版）
• 关键词: 6H-Silicon carbide UV photodetector absorption coefficient responsivity response time
• 年，卷（期）: 2007,（5）
• 页码范围: 1276-1279
• 页数: 4页
• 语种: 英文

摘要

In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.