A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs

• 来源期刊: 中国物理（英文版）
• 关键词: 4H-SiC MESFET drain current model CAD large signal
• 年，卷（期）: 2007,（4）
• 页码范围: 1097-1100
• 页数: 4页
• 语种: 英文

摘要

This paper reports that a 4H-SiC MESFET (Metal Semiconductor Field Effect Transistor) large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE (power added efficiency), output power and gain.