Polymer thin-film transistor based on a high dielectric constant gate insulator

• 来源期刊: 中国物理（英文版）
• 关键词: Polymer Dielectric Field effect transistor Field-effect mobility
• 年，卷（期）: 2007,（4）
• 页码范围: 1145-1149
• 页数: 5页
• 语种: 英文

摘要

In this paper full polymer thin-film transistors (PTFTs) based on Poly (acrylonitrile) (PAN) as the gate dielectric and poly (2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer (6.27) can remarkably reduce the threshold voltage of the transistors to below-3 V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8 × 10-4 cm2/Vs, and on/off current ratio was larger than 102, which was comparable with that of transistors with widely used Poly (4-vinyl phenol) (PVP) or SiO2 as gate dielectrics.