Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

• 来源期刊: 中国物理（英文版）
• 关键词: NBTI recovery interface states oxide positive charges
• 年，卷（期）: 2007,（4）
• 页码范围: 1140-1144
• 页数: 5页
• 语种: 英文

摘要

Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account,conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.