High power and high reliability GaN/InGaN flip-chip light-emitting diodes

• 来源期刊: 中国物理（英文版）
• 关键词: GaN light emitting diode flip-chip high power
• 年，卷（期）: 2007,（4）
• 页码范围: 1135-1139
• 页数: 5页
• 语种: 英文

摘要

High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes (FCLEDs) have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge (ESD) damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard (human body model), the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at1.0 A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power dcgradation or failure. The life test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.