Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment

• 来源期刊: 中国物理（英文版）
• 关键词: MOS capacitors high-k gate dielectric HfO2 interlayer surface treatment
• 年，卷（期）: 2007,（2）
• 页码范围: 529-532
• 页数: 4页
• 语种: 英文

摘要

Trichloroethylene (TCE) pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties,gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growth, the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and Hclon the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric.