MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

• 来源期刊: 中国物理B（英文版）
• 关键词: slow noise amplifier composite-channel AlGaN/GaN HEMTs linearity
• 年，卷（期）: 2007,（11）
• 页码范围: 3494-3497
• 页数: 4页
• 语种: 英文

摘要

A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1μm-gate compositechannel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of-6 dB and an output return loss of-16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm × 100μm device showed very high-dynamic range with decent gain and noise figure.