Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2007,（1）
• 页码范围: 262-264
• 页数: 3页
• 语种: 英文

摘要

In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm technology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.