Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD

• 来源期刊: 中国物理快报(英文版)
• 年，卷（期）: 2007,（8）
• 页码范围: 2401-2404
• 页数: 4页
• 语种: 英文

摘要

Ground by mechanical ball milling under certain conditions,β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga2O3 to ε-Ga2O3.