Effects of Proton Irradiation on a CMOS Image Sensor

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2007,（2）
• 页码范围: 549-551
• 页数: 3页
• 语种: 英文

摘要

We perform 9 MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×109 to 4×1010 cm-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×1010 cm-2. The captured colour images become very blurry at 4×1010 cm-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.