Preparation of p-type ZnO:(Al, N) by a combination of sol-gel and ion-implantation techniques

• 来源期刊: 中国物理B(英文版)
• 关键词: ZnO ion implantation XRD
• 年，卷（期）: 2008,（6）
• 页码范围: 2240-2244
• 页数: 5页
• 语种: 英文

摘要

We report the preparation of p-type ZnO thin films on (0001) sapphire substrates by a combination of sol-gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO:Al films annealed at 600℃ have converted to p-type conduction with a hole concentration of 1.6× 1018 cm-3, a hole mobility of 3.67cm2/V- s and a minimum resistivity of 4.80cm·Ω. Ion-beam induced damage recovery has been investigated by x-ray diffraction (XRD), photoluminescence (PL) and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600℃. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.