Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile

• 来源期刊: 中国科学A辑(英文版)
• 年，卷（期）: 2008,（9）
• 页码范围: 1619-1630
• 页数: 12页
• 语种: 英文
• DOI: 10.1007/s11425-008-0039-6

摘要

The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm(i.e.,uniformly in space).This improves the spatial square norm limit by Wang,Xin and Markowich.