Influence of V/Ⅲ ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

• 来源期刊: 中国物理B（英文版）
• 关键词: molecular beam epitaxy semiconducting Ⅲ-V materials high electron mobility transistors
• 年，卷（期）: 2008,（3）
• 页码范围: 1119-1123
• 页数: 5页
• 语种: 英文

摘要

A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/Ⅲ flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (MBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm2/(V.s)and 3.26x1012cm-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/Ⅲ ratio, for which the reasons are discussed.