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摘要:
With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1-xCdxSe strained heterojunction under hydrostatic pressure by considering the intersubband and intrasubband scattering from the optical phonon modes. A triangular potential approximation is adopted to simplify the potential of the conduction band bending in the channel side and the electronic penetrating into the barrier is considered by a finite interface potential in the adopted model. The numerical results with and without strain effect are compared and analysed. Meanwhile, the properties of electronic mobility under pressure versus temperature, Cd concentration and electronic density are also given and discussed, respectively. It shows that the strain effect lowers the mobility of electrons while the hydrostatic pressure effect is more obvious to decrease the mobility. The contribution induced by the longitudinal optical phonons in the channel side is dominant to decide the mobility. Compared with the intrasubband scattering it finds that the effect of intersubband scattering is also important for the studied material.
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篇名 Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdxSe strained heterojunction
来源期刊 中国物理B(英文版) 学科
关键词 electron mobility ZnSe/Zn1-xCdxSe strain pressure effect
年,卷(期) 2008,(12) 所属期刊栏目
研究方向 页码范围 4606-4613
页数 8页 分类号
字数 语种 英文
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electron mobility
ZnSe/Zn1-xCdxSe
strain
pressure effect
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期刊影响力
中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
出版文献量(篇)
17050
总下载数(次)
0
总被引数(次)
27962
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