Broadband Infrared Luminescence from Bismuth-Doped GeS2-Ga2S3 Chalcogenide Glasses

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2008,（5）
• 页码范围: 1891-1894
• 页数: 4页
• 语种: 英文

摘要

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chaicogenide glasses excited by an 808nm laser diode.The emission peak with a maximum at about 126Onto is observed in 80GeS2-2OGa2Sa:0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually.The full width of half maximum (FWHM) is about 200nm.The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi,such as Bi+.Raman scattering is also conducted to clarify the structure of glasses.These Bi-doped GeS2-Ga2S3 chaicogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.