Self-organized GaN/A1N hexagonal quantum-dots:strain distribution and electronic structure

• 来源期刊: 中国物理B（英文版）
• 关键词: quantum dot strain electronic structare
• 年，卷（期）: 2008,（9）
• 页码范围: 3471-3478
• 页数: 8页
• 语种: 英文

摘要

This paper presents a finite element method of calculating strain distributions in and around the serf-organized GaN/A1N hexagonal quantum dots.The model is based on the continuum elastic theory,which is capable of treating a quantum dot with an arbitrary shape.A truncated hexagonal pyramid shaped quantum dot is adopted in this paper.The electronic energy levels of the GaN/A1N system are calculated by solving a three-dimension effective mass Shr(o)dinger equation including a strain modified confinement potential and polarization effects.The calculations support the previous results published in the literature.