Electronic states of InAs/GaAs tyre-shape quantum ring

• 来源期刊: 中国物理B(英文版)
• 关键词: tyre-shape quantum ring (TSQR) plan wave energy level
• 年，卷（期）: 2008,（8）
• 页码范围: 3054-3057
• 页数: 4页
• 语种: 英文

摘要

In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR's section thickness d, and insensitively dependent on TSQR's section inner radius R1 and TSQR's inner radius R2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.