Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical Vapour deposition

• 来源期刊: 中国物理B（英文版）
• 关键词: SiGe:H thin film plasma assisted RTCVD growth rates optoelectronics property
• 年，卷（期）: 2008,（9）
• 页码范围: 3448-3452
• 页数: 5页
• 语种: 英文

摘要

A new preparing technology,very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD),is introduced to prepare SiGe:H thin films on substrate kept at a lower temperature.In the previous work,reactive thermal chemical vapour deposition(RTCVD)technology Was successfully used to prepare SiGe:H thin films,but the temperature of the substrate needed to exceed 400℃.In this work,very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substratc.The growth rate,structural properties,surface morphology,photoconductivity and dark-conductivity of SiGe:H thin films prepared by this new technology are investigated for films with different germanium concentrations,and the experimental results are discussed.