Approximate Toffoli Gate Originated from a Single Resonant Interaction of Cavity Dissipation and Atomic Spontaneous Emission

• 来源期刊: 理论物理通讯(英文版)
• 年，卷（期）: 2008,（4）
• 页码范围: 871-876
• 页数: 6页
• 语种: 英文

摘要

We propose a potentially practical scheme to implement an approximate three-qubit Toffoli gate by a single resonant interaction in dissipative cavity QED in which the cavity mode decay and atomic spontaneous emission are considered. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the approximate phase gate can be implemented by only a single dissipative resonant interaction of atoms with the cavity mode. Discussions are made for the advantages and the experimental feasibility of our scheme.