Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2008,（3）
• 页码范围: 1034-1037
• 页数: 4页
• 语种: 英文

摘要

We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution.The photoluminescence property is observed in the as-deposited and annealed samples.[-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence(PL)from the Fourier transform infrared spectroscopy and PL measurements.[-SiO3]2- is observed by positron annihilation spectroscopy,and this defect can make the S parameters increase.After 1000℃ annealing,[-SiO3]2- defects still exist in the films.