Influence of strain on hydrogenic impurity states in a GaN/ AlxGa1-xN quantum dot

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2009,（2）
• 页码范围: 85-88
• 页数: 4页
• 语种: 英文
• DOI: 10.1007/s11801-009-8161-4

摘要

Within the effective-mass approximation, we calculated the influence of sawn on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the binding energy of hydrogenic donor impurity decreases when the Al content is increasing. For dot height L < 2 nm, the change of the binding energy is very smafl with the Al content variety.