Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing

• 来源期刊: 半导体光子学与技术（英文版）
• 学科: 工学
• 年，卷（期）: 2009,（2）
• 页码范围: 117-119
• 页数: 3页
• 分类号: TN304.05
• 语种: 英文

摘要

Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing (FA) and rapid thermal annealing ( RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.