Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

• 来源期刊: 中国科学E辑（英文版）
• 年，卷（期）: 2009,（5）
• 页码范围: 1176-1180
• 页数: 5页
• 语种: 英文
• DOI: 10.1007/s11431-008-0203-9

摘要

GalnP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160℃. The results indicate that the quantum ef-ficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density tem-perature coefficients dJoc/dT of GalnP subcell and GaAs subcell are determined to be 8.9 and 7.4 μA/cm2/℃ from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients d Voc/d T calculated based on a theoretical equation are -2.4 mV/℃ and -2.1 mV/℃ for GalnP subcell and GaAs subcell.