Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2009,（4）
• 页码范围: 273-275
• 页数: 3页
• 语种: 英文
• DOI: 10.1007/s11801-009-8214-84

摘要

The diamond films adherent to Si substrate are deposited with the microwave plasma CVD (MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h, respectively, the internal stresses of the films are measured by XRD. Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses. The results show that the macro stress is tensile. The internal stress can be controlled by the microwave power. With the microwave power increasing,the intrinsic and macro stresses decrease, and the micro stress increases significantly. Also, it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.