Synthesis and electrical characterization of tungsten oxide nanowires

• 来源期刊: 中国物理B（英文版）
• 关键词: tungsten oxide nanowires chemical vapour deposition (CVD) electrical characterization metal-semiconductor-metal (MSM) structure
• 年，卷（期）: 2009,（7）
• 页码范围: 3024-3030
• 页数: 7页
• 语种: 英文

摘要

Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.