Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effct transistor

• 来源期刊: 中国物理B（英文版）
• 关键词: 4H silicon carbide metal semiconductor field effect transistor drain induced barrierlowering effect short channel
• 年，卷（期）: 2009,（10）
• 页码范围: 4456-4459
• 页数: 4页
• 语种: 英文

摘要

Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region.this paperinvestigates the behavior of DIBL(drain induced barrier lowering)effect for short channel 4H-SiC metal semiconductorfield effect transistors(MESFETs).An accurate analytical model of threshold voltage shift for the asymmetric shortchannel 4H-SiC MESFET is presented and thus verified.According to the presented model.it analyses the thresholdvoltage for short channel device on the L/a(channel length/channel depth)ratio,drain applied voltage VDS and channeldoping concentration ND,thus providing a good basis for the design and modelling of short channel 4H-SiC MESFETsdevice.