Effects of modulation frequency on the structure and electrical characteristics of μc-Si: H films prepared by pulsed VHF-PECVD

• 来源期刊: 光电子快报(英文版)
• 年，卷（期）: 2009,（3）
• 页码范围: 212-215
• 页数: 4页
• 语种: 英文
• DOI: 10.1007/s11801-009-8206-8

摘要

Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology. An experimental study on the microcrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented. And combining the diagnosis of plasma process with optical emission spectroscopy (OES), the dependence of microstructure and electrical properties of thin films on the pulse modulation frequency is discussed in detail.