The modulation of Schott ky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

• 来源期刊: 中国物理B（英文版）
• 关键词: Schottky barrier height silicide-as-diffusion source Ni silicide
• 年，卷（期）: 2009,（10）
• 页码范围: 4465-4469
• 页数: 5页
• 语种: 英文

摘要

This paper reports that the Schottky barrier height modulation of NiSi/n-si is experimentally investigated byadopting a novel silicide-as-diffusion-source technique.which avoids the damage to the NiSi/Si interface induced fromthe conventional dopant segregation method.In addition,the impact of post-BF2 implantation after silicidation on thesurface morphology of Ni silicides iS also illustrated.The thermat stabihty of Ni silicides can be improved by sihcide-as-diffusion-source technique.Besides,the electron Schottky barrier height is successfully modulated bv 0.11 eV at aboron dose of 1015 cm-2 in comparison with the non.implanted samples.The change of barrier height is not attributedto the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causesthe upward bending of conducting band.The results demonstrate the feasibility of novel silicide-as-diffusion-sourcetechnique for the fabrication of Schottky source/drain Si MOS devices.