Effects of Different Plasma Energy Treatments on n-Type A10.4Ga0.6N Material

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2009,（7）
• 页码范围: 267-269
• 页数: 3页
• 语种: 英文

摘要

Elxtronic properties, surface chemistry and surface morphology of plasma-treated n-Alo.4Gao.6N material are studied by electrical contact measurements, atomic force microscopy and x-ray photoemission spectroscopy. Al-though excessive etching can cause the surface roughness to significantly increase, the nitrogen vacancies VN produced by the excessive etching can be compensated for by the negative effects of the rougher surface. Thus,VN produced by excessive etching plays a key role in Ohmic contact of high-Al content AIGaN and it can re-duce Ohmic contact resistance. The effect of rapid thermal annealing on the performance of n-Al0.4Ga0.6N can significantly reduce the etching damage caused by excessive etching.