The influences of thickness of spacing layer and the elastic anisotropy on the strain fields and band edges of InAs/GaAs conical shaped quantum dots

• 来源期刊: 中国物理B（英文版）
• 关键词: quantum dot strain electronic structure
• 年，卷（期）: 2009,（1）
• 页码范围: 16-22
• 页数: 7页
• 语种: 英文

摘要

Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges (both conduction band and valence band) of the InAs/GaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronie devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.