Raman scattering studies on manganese ion-implanted GaN

• 来源期刊: 中国物理B（英文版）
• 关键词: diluted magnetic semiconductors gallium nitride implantation Raman spectroscopy
• 年，卷（期）: 2009,（4）
• 页码范围: 1637-1642
• 页数: 6页
• 语种: 英文

摘要

This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted.Several Raman defect modes have emerged from the implanted samples.The structures around 182 cm-1 modes are attributed to the disorder-activated Raman scattering,whereas the 361 cm-1 and 660 cm-1 peaks are assigned to nitrogen vacancy-related defect scattering.One additional peak at 280 cm-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering.A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700℃ and 1050℃ on Mn implanted GaN epilayers.The behaviour of peak-shape change and full width at half maximum(FWHM)of the A1(LO)(733 cm-1)and EH2(566 cm-1)Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.