Numerical model of multilayer organic light-emitting devices

• 来源期刊: 中国物理B（英文版）
• 关键词: organic light-emitting devices multilayer simulation
• 年，卷（期）: 2009,（4）
• 页码范围: 1627-1630
• 页数: 4页
• 语种: 英文

摘要

A numerical model of multilayer organic light-emitting devices is presented in this article.This model is based on the drift-diffusion equations which include charge injection,transport,space charge effects,trapping,heterojunction interface and recombination process.The device structure in the simulation is ITO/CuPc(20 nm)/NPD(40 nm)/Alq3(60 nm)/LiF/Al.There are two heterojunctions which should be dealt with in the simulation.The Ⅰ-Ⅴ characteristics,carrier distribution and recombination rate of a device are calculated.The simulation results and measured data are in good agreement.