A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment

• 来源期刊: 中国物理B（英文版）
• 关键词: pulsed laser deposition thin film pretreatment SOI substrate
• 年，卷（期）: 2009,（4）
• 页码范围: 1679-1683
• 页数: 5页
• 语种: 英文

摘要

Highly epitaxial YBa2Cu3O7-δ(YBCO)and yttria-stabilized zirconia(YSZ)bilayer thin films have been deposited on silicon-on-insulator(SOI)substrates by using in situ pulsed laser deposition(PLD)technique.In the experiment,the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15s.Comparing several qualities of films grown on substrates with or without HF pretreatment,such as thin film crystallinity,general surface roughness,temperature dependence of resistance,surface morphology,as well as average crack spacing and crack width,naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.