High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

• 来源期刊: 中国物理B（英文版）
• 关键词: silicon carbide Schottky barrier diode electron radiation annealing effect
• 年，卷（期）: 2009,（5）
• 页码范围: 1931-1934
• 页数: 4页
• 语种: 英文

摘要

This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes (SBDs) were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance RS of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.