Thermal stability of Mg2Si epitaxial film formed on Si(111)substrate by solid phase reaction

• 来源期刊: 中国物理B（英文版）
• 关键词: Mg2Si solid phase reaction thermal stabihty
• 年，卷（期）: 2009,（7）
• 页码范围: 3079-3083
• 页数: 5页
• 语种: 英文

摘要

A single crystalline Mg2Si film was formed by solid phase reaction(SPR)of a Si(111)substrate with an Mg overlayer capped with an oxide layer(s).which Was enhanced by post annealing from room temperature to 100℃ in a molecular beam epitaxy(MBE)system.The thermal stability of the Mg2Si film Was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650℃,respectively.The Mg2Si film stayed stable until the annealing temperature reached 450℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.