Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2009,（7）
• 页码范围: 335-338
• 页数: 4页
• 语种: 英文

摘要

The effects of strain compensation are investigated by using twenty periods of highly strain-compensated In-GaAs/InAIAs superlattice. The lattice mismatches of individual layers are as high as about 1%, and the thick-nesses are close to critical thicknesses. X-ray diffraction measurements show that lattice imperfectness is not serious but still present, though the structural parameters are within the range of theoretical design criteria for structural stability. Rough interfaces and composition fluctuations are the primary causes for lattice imperfect-hess. Photoluminescence measurements show the large thermally activated nonradiative recombination in the sample. In addition, the recombination process gradually evolves from excitonic recombination at lower tempera-tares to band-to-band recombination at higher temperatures, which should be considered in device applications.