GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2009,（2）
• 页码范围: 271-273
• 页数: 3页
• 语种: 英文

摘要

InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(O01) semi-insulating substrates. An interracial misfit mode A1Sb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/8 ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm2 without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05 μm at 77K and 2.25 μ m at 300 K, the peak detectivities of the detectors are 4 × 109 cm·Hz1/2/W at 77K and 2 × 108 cm.Hz1/2/W at 30OK, respectively.