Effect of anneal temperature on electrical and optical properties of SnS:Ag thin films

• 作者: Hong-Jie Jia Shu-Ying Cheng Xin-Kun Wu Yong-Li Yang
• 来源期刊: 自然科学期刊(英文)
• 学科: 物理学
• 关键词: Sns:Ag FILMS Thermal EVAPORATION ANNEALING Electrical And Optical Properties
• 年，卷（期）: zrkxqkyw_2010,（3）
• 页码范围: 197-200
• 页数: 4页
• 分类号: O48

摘要

SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obtain sil-ver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal struc-ture, and the crystallites in the films were ex-clusively oriented along the(111)direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their re-sistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260℃, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier con-centration was up to 1.132 × 1017 cm-3, and the resistivity was about 3.1 Ωcm.